A New Dry Etching Method with the High Etching Rate for Patterning Cross–Linked SU–8 Thick Films

Oxygen etching of thick MoS2 films.

Oxygen annealing of thick MoS2 films results in randomly oriented and controllable triangular etched shapes, forming pits with uniform etching angles. These etching morphologies differ across the sample based on the defect sites situated on the basal plane surface, forming numerous features in different bulk sample thicknesses.

Patterning PDMS using a combination of wet and dry etching

PDMS films of 10 μm thickness can be patterned within 30 min by combining dry etching to achieve substantially vertical sidewalls with wet etching to achieve high etch rates and to protect the underlying substrate from attack. Dry etching alone would have taken 5 h, and wet etching alone would produce severe undercutting. In addition, using either technique alone produces undesirable surface mo...

Dry etching and sputtering.

Dry etching is an important process for micro- and nanofabrication. Sputtering effects can arise in two contexts within a dry-etch process. Incoming ions cause removal of volatile products that arise from the interaction between the dry-etch plasma and the surface to be etched. Also, the momentum transfer of an incoming ion can cause direct removal of the material to be etched, which is undesir...

Wet and Dry Etching Theory

Dry Etching Based Silicon Micromachining

The aim of this work is to demonstrate the “dry” etching based micro-fabrication technologies in the manufacturing of Single Crystal Silicon (SCS) for Micro-Electro/(Optical)-Mechanical-Systems (ME(O)MS). The ME(O)MS technology is very fast growing industry branch based often on the same silicon technology as integrated circuits. The process of plasma-dry etching is quite simple straightforward...